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4 November 1999 Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films
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Abstract
The thermally induced currents (TIC) and instabilities of photoresponse in Pb1-x-ySnxGeyTe(IN) films on BaF2 substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature TM corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.
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Boris A. Akimov, Vladislav A. Bogoyavlenskiy, Ludmila I. Ryabova, and Vyacheslav N. Vasil'kov "Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368357
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