29 September 1999 Advanced rf CMOS technology
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CMOS has been used for advanced LSIs so many years because of its excellent low-power and high-speed characteristics for highly-integrated digital circuits. For high frequency analog applications such as RF, it has not been used popularly because CMOS has been assumed to have poor capability compared with silicon bipolar and compound semiconductor devices. However, recent miniaturization of CMOS devices has significantly improved the CMOS RF characteristics. For example, typical values of fT and fmax for 0.25 micrometers n-MOSFETs already exceed 40 GHz, and those for 0.1 micrometers n-MOSFETs are more than 100 GHz. RF noise of the MOSFETs is also as god as less than 1 dB at 2 GHz operations. In this paper, CMOS technology for RF front- end circuit for mobile telecommunication devices is explained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Iwai, Hiroshi Iwai, Tatsuya Ohguro, Tatsuya Ohguro, Eiji Morifuji, Eiji Morifuji, Takashi Yoshitomi, Takashi Yoshitomi, Hideki Kimijima, Hideki Kimijima, Hisayo S. Momose, Hisayo S. Momose, Kazumi Inoh, Kazumi Inoh, Hideaki Nii, Hideaki Nii, Yasuhiro Katsumata, Yasuhiro Katsumata, "Advanced rf CMOS technology", Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); doi: 10.1117/12.364461; https://doi.org/10.1117/12.364461

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