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29 September 1999 Semiconductor-polymer-based rf MEMS
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Abstract
Semiconductor-polymer based sensors use silicon or compound semiconductors as inorganic parts with sensitive polymers as insulating, semiconducting or conductive materials. Organic thin film transistor has also been fabricated using this concept. These devices may allow control circuitry to be integrated with two and three dimensional MEMS. Interdigital type RF-MEMS can be designed and fabricated with Interdigital Electrodes (IDE) deposited on either polymer or an inorganic material such as Barium Strontium Titanate (BST). In the case of polymer based device, we study the capacitance change and calibrate it for desired sensing application. In the inorganic case, we make use of the change in dielectric properties of BST as a function of DC bias. IDE will act like a RF filter and oscillator just like the comb-type RF MEMS devices. These polymeric based devices can be integrated with organic thin film transistors.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vijay K. Varadan, Vasundara V. Varadan, and K. A. Jose "Semiconductor-polymer-based rf MEMS", Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); https://doi.org/10.1117/12.364448
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