Paper
1 October 1999 Inertial sensing paradigm using an accelerometer array: XL-array
Seo Kyu Kim, KukJin Chun
Author Affiliations +
Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364484
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia
Abstract
An accelerometer array that is a new concept for inertial sensing paradigm is presented. A surface micromachining technology with 6 micrometers -thick polycrystalline silicon was used to fabricate the array and dichlorodimethylsilane grafting as a new anti-stiction method was used to perfectly release 36 accelerometer cells. Test result show the dynamic range of +/- 30G with 1 percent non-linearity and 2.5 mG noise equivalent level. The XL-array was composed of 36 sensing capacitors of the accelerometer cells that are connected in parallel. So the total capacitance in the XL- array was the capacitance of unit cell multiplied by the number of the accelerometer cell.Lager capacitance change is required to obtain a high sensitivity and SNR. This multiple cell structure could provide redundancy for low-yield manufacturing. The cell structures can be easily scaled for spring stiffness and mass to increase the resonant frequency and operating bandwidth. This array-typed structure also gives less sensitivity to residual stress and stress gradient than larger single mass structure. Higher performance can be achieved by making of large array.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seo Kyu Kim and KukJin Chun "Inertial sensing paradigm using an accelerometer array: XL-array", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364484
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Cited by 2 scholarly publications.
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KEYWORDS
Capacitance

Capacitors

Electrodes

Silicon

Sensors

Surface micromachining

Low pressure chemical vapor deposition

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