Local defect real-time monitor system in lithography

Hung-Chih Chen; Tse-Yu Lin; Yao-Chang Chu; Chih-Chien Hung

doi:10.1117/12.364496

1 October 1999 Local defect real-time monitor system in lithography

Hung-Chih Chen, Tse-Yu Lin, Yao-Chang Chu, Chih-Chien Hung

Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364496
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

In lithography process local defocus is a troublesome problem. That is because local defocus is too difficult to catch in time with current monitor method. Once the local defocus symptoms have been observed at ADI. A lot of wafers should suffer repeating local defect from wafer to wafer. in this paper. A real time monitor system will be presented. And the catching rate could reach to 80 percent. Even reach to more catching rate if set specific specification for varied layers. Because varied layers allow different focus tolerance.

Citation Download Citation

Hung-Chih Chen, Tse-Yu Lin, Yao-Chang Chu, and Chih-Chien Hung "Local defect real-time monitor system in lithography", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364496

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available