1 October 1999 Local defect real-time monitor system in lithography
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In lithography process local defocus is a troublesome problem. That is because local defocus is too difficult to catch in time with current monitor method. Once the local defocus symptoms have been observed at ADI. A lot of wafers should suffer repeating local defect from wafer to wafer. in this paper. A real time monitor system will be presented. And the catching rate could reach to 80 percent. Even reach to more catching rate if set specific specification for varied layers. Because varied layers allow different focus tolerance.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Chih Chen, Hung-Chih Chen, Tse-Yu Lin, Tse-Yu Lin, Yao-Chang Chu, Yao-Chang Chu, Chih-Chien Hung, Chih-Chien Hung, "Local defect real-time monitor system in lithography", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364496; https://doi.org/10.1117/12.364496


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