Paper
1 October 1999 Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy
Dan V. Nicolau, Cristina Bercu, Simion Coca, Takahisa Taguchi
Author Affiliations +
Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364492
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia
Abstract
We propose a method for the monitoring of the glass transition temperature of the resist used in semiconductor lithography based on the broad-band Nuclear Magnetic Resonance technique. The method is capable to trace the evolution of the mobility of several major chemical species present in a resist system versus processing parameters, e.g. exposure energy and bake temperature. The most important components, namely the lower molecular weight photoactive compound and the higher molecular weight base resin, were characterized, in accordance with their signals, as mobile and the rigid component, respectively. The method has the potential for being used for process optimization and for on-line monitoring.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan V. Nicolau, Cristina Bercu, Simion Coca, and Takahisa Taguchi "Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364492
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KEYWORDS
Polymers

Photoresist materials

Spectroscopy

Glasses

Independent component analysis

Picture Archiving and Communication System

Signal processing

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