1 October 1999 Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films
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Abstract
Binary metal oxide MoO3-TiO2 thin films have been prepared by the sol-gel process. These films were deposited on sapphire substrates with interdigital electrodes and single crystal silicon substrates. The films were annealed at different temperatures of 400 degrees C, 500 degrees C, and 600 degrees C for 1 hour. The morphology, crystalline structure and chemical composition of the films have been analyzed using SEM, XRD, RBS and XPS techniques. The SEM analysis showed that the films annealed at 500 degrees C are smooth and uniform with nanosized grains and probes. RBS and XPS characterizations have revealed that the films are nearly stoichiometric. In this work, we have investigated the sensitivity of this material for oxygen and ozone gases. The MoO3-based gas sensor is capable of detecting O2 down to 50 ppm with a very fast response time. Adding TiO2 to MoO3 thin films tremendously reduced the resistance, which assisted the measurement of ozone gas sensing.
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Yongxiang Li, Yongxiang Li, Muralihar K. Ghantasala, Muralihar K. Ghantasala, Kosmas Galatsis, Kosmas Galatsis, Wojtek Wlodarski, Wojtek Wlodarski, } "Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364505; https://doi.org/10.1117/12.364505
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