12 November 1999 Analysis and design of AlGaInP single-quantum-well LED
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370302
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Calculations are done and compared for two AlGaInP single- quantum-well (SQW) LED structures: step separate- confinement-heterostructure (SCH) SQW structure and graded- index (GRIN) SCH-SQW structure. It is found that the latter has better performance in terms of spontaneous lifetime and injection efficiency. This is attributed to greater barrier height to electron leakage and substantial overlap between wavefunctions of different quantum numbers in the GRIN-SCH- SQW structure. Results also show that the GRIN layer thickness has no influence on the QW energy levels. spontaneous lifetime and injection efficiency in a GRIN-SCH- SQW.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
LiangPao Lee, Soo-Jin Chua, "Analysis and design of AlGaInP single-quantum-well LED", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370302; https://doi.org/10.1117/12.370302
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