Dual-wavelength response in double-barrier quantumwell infrared photodetectors

T. Osotchan; Dao Hua Zhang; W. Shi

doi:10.1117/12.370360

12 November 1999 Dual-wavelength response in double-barrier quantumwell infrared photodetectors

T. Osotchan, Dao Hua Zhang, W. Shi

Author Affiliations +

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370360
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Quantum well IR photodetector (QWIP) which exhibits the dual wavelength response in region of 3-5 and 8-12 μm was demonstrated in one stack of double barrier quantum well (DBQW) structures. These dual-band photoresponse originate from intersubband absorption between bound-to-quasi-bound and bound-to-continuum states, respectively. The symmetric DBQW consists of two subsequence barriers on both sides of the well i.e. inner thin high barrier and outer thick low barrier. The inner barrier was designed to be thin enough to allow photocarriers in quasi-bound-state tunnel through and also to make the continuum-state occurs at the top of the outer barrier. Due to photoresponse from the transitions between bound-to-quasi-bound and bound-to-continuous states, the desired wavelength regions were tailored by the barrier height of both inner and outer carriers while the sensitivities of each band were designed by thickness of the inner barrier. The optimum structure was proposed by 14-band Hamiltonian including six p-like conduction band states. The absorption in TE and TM mode were separately derived and illustrated in each response wavelength for the optimum structure.

Citation Download Citation

T. Osotchan, Dao Hua Zhang, and W. Shi "Dual-wavelength response in double-barrier quantumwell infrared photodetectors", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370360

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