12 November 1999 Electrochemical synthesis of SnS thin films for photoelectrochemical cells
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370350
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Tin Sulphide (SnS), a layered semiconducting material which finds wide applications in optoelectronic devices and window material for heterojunction solar cell. This paper reports on the material properties of thin films of SnS prepared by electrodeposition and brush plating. Brush plating is an electroplating process usually adopted to coat large area thin metal or alloy film. The films of 0.6-1.0 μm and 1.0-2.5 μm thickness were prepared by electrodeposition and brush plating respectively. X-ray diffraction studies showed that the as prepared films of both techniques revealed polycrystalline nature of the films and the lattice parameter values are: a=0.403 nm; b=1.145 nm; and c=0.399 nm. The surfaces were analyzed by electron spectroscopy for chemical analysis and SEM for surface morphology. The band gap, refractive index and extinction coefficient values were estimated from the optical studied in the wavelength region of 400-1500 nm. The adhesion of the films prepared by brush plating was found to be excellent. Photoelectrochemical solar cells were fabricated using SnS photoelectrodes. Capacitance-voltage studies revealed the p- type nature of all the films. The flat band potentials were 0.52 V and 0.47 V respectively. The quality of the films prepared by electrodeposition and brush plating are compared.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Subramanian, C. Sanjeevi Raja, M. Jayachandran, Mary Juliana Chockalingam, "Electrochemical synthesis of SnS thin films for photoelectrochemical cells", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370350; https://doi.org/10.1117/12.370350
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