Fabrication of infrared LEDs/LDs at wavelength of 1.5 um using LPE-grown wafer

Dwi Bayuwati; Masbah Rotuanta Tagore Siregar; Tomi Budi Waluyo

doi:10.1117/12.370355

12 November 1999 Fabrication of infrared LEDs/LDs at wavelength of 1.5 μm using LPE-grown wafer

Dwi Bayuwati, Masbah Rotuanta Tagore Siregar, Tomi Budi Waluyo

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370355
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

We describe our research on the fabrication of GaInAsP/InP Light Emitting Diodes (LEDs)/Laser Diodes (LDs) at wavelength of 1.5 micrometers using wafer grown by Liquid Phase Epitaxy (LPE) system. The source materials are baked at temperature of 610 degrees C at the horizontal LPE system. The epitaxially layers are formed on InP substrate in the graphite boat with the cooling rate of 0.7 degrees C/min. The wafers are characterized using Scanning Electron Microscope (SEM), Photoluminescence (PL) and x-ray Diffraction (XRD) techniques. It is formed into LED chips by cleaving method after metalization, annealing and lapping processes. About 20-30 LED chips can be obtained from a wafer. Characterization has been conducted to examine the LED basics characteristics which showing the diode characteristics of the chips at its voltage-current curve. Furthermore, electroluminescence process is conducted by giving an instantaneous current pulse on the chip and detecting the output light using Ge detector; resulting a voltage-time curve displayed at a digital storage oscilloscope. The spectrum of the LED chip was observed by using an optical spectrum analyzer, giving peak wavelength at (lambda) approximately 1.5 micrometers with spectral width between 90-105 nm. Future works in fabrication of GaInAsP/InP LD at this wavelength is still underway starting with preliminary experiment of photolithography and etching techniques of LPE grown wafers is conducted.

Citation Download Citation

Dwi Bayuwati, Masbah Rotuanta Tagore Siregar, and Tomi Budi Waluyo "Fabrication of infrared LEDs/LDs at wavelength of 1.5 μm using LPE-grown wafer", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370355

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KEYWORDS

Light emitting diodes

Liquid phase epitaxy

Semiconducting wafers

Etching

Heterojunctions

Annealing

Scanning electron microscopy

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