Imaging the near-field intensity gradients of a low-power semiconductor laser

Nien Hua Lu; Din Ping Tsai; Wei Yi Lin; H. J. Huang

doi:10.1117/12.370301

12 November 1999 Imaging the near-field intensity gradients of a low-power semiconductor laser

Nien Hua Lu, Din Ping Tsai, Wei Yi Lin, H. J. Huang

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370301
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

A newly developed inverted tapping-mode tuning-fork near- field scanning optical microscope is used to study the local near-field radiation properties of a strained AlGaInP/Ga_0.4In_0.6P low power visible multiquantum-well laser diode. With this novel technique, we can easily image the local near-field optical intensity gradients. In the intensity ratio image there are remarkable contrasts among the various regions on the laser diode facet. The anomalous phenomenon manifests the different origins of the near-field optical waves from various regions on the laser diode facet. We believe that this method should be very important for further understanding the optical radiation properties in the near-field region.

Citation Download Citation

Nien Hua Lu, Din Ping Tsai, Wei Yi Lin, and H. J. Huang "Imaging the near-field intensity gradients of a low-power semiconductor laser", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370301

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