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12 November 1999 Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370351
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Two-layer light emitting devices were fabricated using electrochemical deposited polybithiophene (PBTh) as the hole-transport layer and spin coated blend of polyoctylthiophene and a butadiene derivative as the emitting layer. It was found that the current density used for depositing polybithiophene greatly affects the effectiveness of the PBTh films as the hole-transport layers in enhancing the electroluminescent (EL) intensity and efficiency. Through analyzing the oxidation-reduction properties and conductivity of the PBTh films and the EL efficiency of the device, it can be concluded that there is an optimal current density for depositing the PBTh hole transport layer for the El devices.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guangming Wang, Xiao Hu, and Terence Kin Shun Wong "Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370351
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