12 November 1999 Optical damage in Zn:Ga:LiNbO3 waveguide substrates
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370369
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Doping ZnO and Ga2O3 in LiNbO3 crystal, the Zn:Ga:LiNbO3 was grown by Czochralski method. The IR transmission spectra and the photon damage resistance ability of the LiNbO3 and Zn:Ga:LiNbO3 crystal were measured. The proton exchange technology was used to make the LiNbO3 and Zn:Ga:LiNbO3 crystal waveguide substrates. The m-line method was taken to study the photo damage of waveguide substrate. We observed that the threshold of Zn:Ga:LiNbO3 is above two magnitude higher than that of Mg:LiNbO3. Zn:Ga:LiNbO3 crystal is better performance than LiNbO3 crystal.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yequan Zhao, Wusheng Xu, Hongxi Zhang, Yuheng Xu, Jiyang Wang, "Optical damage in Zn:Ga:LiNbO3 waveguide substrates", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370369; https://doi.org/10.1117/12.370369

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