12 November 1999 Optical damage in Zn:Ga:LiNbO3 waveguide substrates
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370369
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Doping ZnO and Ga2O3 in LiNbO3 crystal, the Zn:Ga:LiNbO3 was grown by Czochralski method. The IR transmission spectra and the photon damage resistance ability of the LiNbO3 and Zn:Ga:LiNbO3 crystal were measured. The proton exchange technology was used to make the LiNbO3 and Zn:Ga:LiNbO3 crystal waveguide substrates. The m-line method was taken to study the photo damage of waveguide substrate. We observed that the threshold of Zn:Ga:LiNbO3 is above two magnitude higher than that of Mg:LiNbO3. Zn:Ga:LiNbO3 crystal is better performance than LiNbO3 crystal.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yequan Zhao, Yequan Zhao, Wusheng Xu, Wusheng Xu, Hongxi Zhang, Hongxi Zhang, Yuheng Xu, Yuheng Xu, Jiyang Wang, Jiyang Wang, } "Optical damage in Zn:Ga:LiNbO3 waveguide substrates", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370369; https://doi.org/10.1117/12.370369
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