12 November 1999 Phase calculation of (100) oriented InGaAsSb grown with liquid phase epitaxy
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370354
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
The solidus-liquidus phase diagram of oriented InxGa1-xAsySb1-y quaternary alloy, which is latticed-matched to the GaSb substrate, has been calculated. We used the Levenberg-Marquardt method to deal with the nonlinear equations and find the phase curves at different temperatures. We obtained a series of phase diagrams from 500°C to 730°C. The phase plots of the indium content in the GaSb-lattice matched InxGa1-xAsySb1-y quaternary as a function of the antimony content of the metal at different temperatures bear three kinds of shapes. The plots below 532.7°C are similar, displaying a hyperbola with two branches, and the lower the temperature, the larger is the gap between the branches. The phase plot changes to two intersected lines at 532.7°C. At temperatures higher than 532.7°C, the phase diagram includes a nearly symmetrical curve and a segment. The higher is the temperature, the shorter is the segment. A new growth region have been discovered, where GaSb-lattice matched InxGa1-xAsySb1-y with high indium content can be grown.
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XiangJun Mao, Yuen Chuen Chan, Yee Loy Lam, "Phase calculation of (100) oriented InGaAsSb grown with liquid phase epitaxy", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370354; https://doi.org/10.1117/12.370354
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