12 November 1999 Phase calculation of (100) oriented InGaAsSb grown with liquid phase epitaxy
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370354
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
The solidus-liquidus phase diagram of oriented InxGa1-xAsySb1-y quaternary alloy, which is latticed-matched to the GaSb substrate, has been calculated. We used the Levenberg-Marquardt method to deal with the nonlinear equations and find the phase curves at different temperatures. We obtained a series of phase diagrams from 500°C to 730°C. The phase plots of the indium content in the GaSb-lattice matched InxGa1-xAsySb1-y quaternary as a function of the antimony content of the metal at different temperatures bear three kinds of shapes. The plots below 532.7°C are similar, displaying a hyperbola with two branches, and the lower the temperature, the larger is the gap between the branches. The phase plot changes to two intersected lines at 532.7°C. At temperatures higher than 532.7°C, the phase diagram includes a nearly symmetrical curve and a segment. The higher is the temperature, the shorter is the segment. A new growth region have been discovered, where GaSb-lattice matched InxGa1-xAsySb1-y with high indium content can be grown.
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XiangJun Mao, XiangJun Mao, Yuen Chuen Chan, Yuen Chuen Chan, Yee Loy Lam, Yee Loy Lam, } "Phase calculation of (100) oriented InGaAsSb grown with liquid phase epitaxy", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370354; https://doi.org/10.1117/12.370354
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