12 November 1999 Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370305
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
We report the development of a new quantum well intermixing technique in GaAs/AlGaAs laser structure. This technique uses a grown-in AlAs sacrificing layer as intermixing source and with the same layer, but oxidized using a one-step rapid thermal process (RTP), as the intermixing mask. Selective intermixing can therefore be achieved across the wafer using a one-step RTP cycle. Differential bandgap shift of as large as 47 meV has been observed from the masked and oxidized regions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seng Lee Ng, Seng Lee Ng, Oki Gunawan, Oki Gunawan, Boon Siew Ooi, Boon Siew Ooi, Yee Loy Lam, Yee Loy Lam, Yan Zhou, Yan Zhou, Yuen Chuen Chan, Yuen Chuen Chan, } "Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370305; https://doi.org/10.1117/12.370305
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