12 November 1999 Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 μm
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Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370300
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP QW lasers emitting at 1.55 micrometers are studied theoretically. Independent of material system, large band discontinuity results in a large number of subbands and high density of states, which gives rise to lower optical gain and T0. Besides, the 3 dB bandwidth is increased and is more resilient to high temperature. InGaAs/InAlGaAs QW lasers can achieve threshold of 572 Acm-2, T0 of 45K and 3 dB bandwidth of 38 GHz at gain of 100 cm-1. InGaAs/InGaAsP QW lasers can only achieve 22 GHz. This suggests that the low conduction band offset ratio limits the bandwidth of InGaAs/InGaAsP QW lasers. InGaAs/InAlGaAs laser, on the other hand, could be designed to give low threshold, large bandwidth and high T0.
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HongKhai Khoo, HongKhai Khoo, Soo-Jin Chua, Soo-Jin Chua, } "Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 μm", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370300; https://doi.org/10.1117/12.370300
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