11 November 1999 Development of a pyroelectric thin film infrared sensor by micro-opto-electro-mechanical system (MOEMS) technology
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Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369329
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
An IR sensor with the lead-titanate (PbTiO3) thin-film and thermal isolation improvement structure using the technology of micro-opto-mechanical system has been designed, fabricated and developed. In this paper, both numerical analysis of the static operation mechanisms such as the effects of IR light power on the depletion layer width and voltage drop across the thin PbTiO3 film, and the dynamic responses of a thin-film pyroelectric sensor to sinusoidal modulated radiation are reported and compared to the experimental results. The fitting is quite well. The major IR-sensing par ton the cantilever beam of the developed sensor consists of a 50-nm PbTiO3 layer deposited by RF sputtering, and a gold layer evaporated as an IR radiation absorber. With active cantilever dimensions of 200 X 100 X 5 micrometers 3 formed by etching processes, the cantilever structure exhibits a much superior performances to that of a traditional IR-sensing bulk structure under the 800-(mu) W incident optical light with wavelength of 970 nm.
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Jyh-Jier Ho, Jyh-Jier Ho, Yuen Keun Fang, Yuen Keun Fang, M. C. Hsieh, M. C. Hsieh, Chin-Ying Chen, Chin-Ying Chen, S. F. Ting, S. F. Ting, S. M. Lin, S. M. Lin, K. H. Wu, K. H. Wu, } "Development of a pyroelectric thin film infrared sensor by micro-opto-electro-mechanical system (MOEMS) technology", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369329; https://doi.org/10.1117/12.369329
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