11 November 1999 High-precision measurement scheme for half-wave voltage of Y-tap MIOC
Author Affiliations +
Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369337
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
A high-precision measure scheme for half-wave voltage V(pi ) of Y-tap MIOC is proposed. This scheme is based on Sagnac interferometer and a saw-tooth wave with special period is used. With this scheme, the temperature characteristics of V(pi ) of a type of MIOC is studied experimentally. The result shows that its half-wave voltage is temperature-dependent. In the range of -10 to +55, the varying value is 0.162V, the temperature coefficient is 662 PPM/degrees C and the variation is linear and repetitive. Experimental study and detail discussion demonstrate that high accuracy can be achieved with this scheme and it is very suitable to be used in studying and calibrating V(pi ) of the modulator used in close-loop FOG in-site.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuanhong Yang, Yuanhong Yang, Weixu Zhang, Weixu Zhang, Jing Ma, Jing Ma, } "High-precision measurement scheme for half-wave voltage of Y-tap MIOC", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369337; https://doi.org/10.1117/12.369337


Back to Top