11 November 1999 High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy
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Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369313
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
After a short introduction on the theory and instrumentation of Raman spectroscopy, its application for local stress and temperature measurements in semiconductor devices is discussed. Examples are given for silicon isolation structures, transistors, solder bumps and back-grinding. It is shown how the resolution can be improved by using an oil immersion objective and deconvolution techniques. Different imaging modes are discussed and their resolution is compared. Examples of 1D and of 2D scans are shown.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ingrid De Wolf, Ingrid De Wolf, Jian Chen, Jian Chen, Mahmoud Rasras, Mahmoud Rasras, W. Merlijn van Spengen, W. Merlijn van Spengen, Veerle Simons, Veerle Simons, } "High-resolution stress and temperature measurements in semiconductor devices using micro-Raman spectroscopy", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369313; https://doi.org/10.1117/12.369313
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