11 November 1999 Simulation and study on the temperature effect of the a-Ta2O5 ISFET
Author Affiliations +
Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369378
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
In the research, we simulated the temperature characteristics of the a-Ta2O5 ISFET by the Gouy- Chapman-Stern theory. The values of the pKa and pKb would be induced to calculate the temperature coefficients of the a-Ta2O5 ISFETs for predicting the behaviors of the a-Ta2O5 ISFET under different temperatures. In the experiment we used the method finding the VGS values of the experimental curves by fixed IDS value to get the pH sensitivities at different temperatures. By using the same way we could change the temperatures to find the temperature coefficients in different pH solutions. The relationship of the pH sensitivities of a-Ta2O5 ISFET versus the temperatures were the linear. Oppositely the curves of the temperature coefficients is not linearly obviously.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung Chuan Chou, Jung Chuan Chou, Ying Shin Li, Ying Shin Li, } "Simulation and study on the temperature effect of the a-Ta2O5 ISFET", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369378; https://doi.org/10.1117/12.369378


Meta-stability effects in organic based transistors
Proceedings of SPIE (September 21 2005)
DC and AC conductivity of PbSe Si structures grown by...
Proceedings of SPIE (October 21 2003)
Modeling field effect pH sensor
Proceedings of SPIE (December 28 2004)
pH response of a-Si:H ISFET
Proceedings of SPIE (November 10 1999)

Back to Top