pH response of a-Si:H ISFET

Jung Chuan Chou; Jin Sung Lin

doi:10.1117/12.369379

11 November 1999 pH response of a-Si:H ISFET

Jung Chuan Chou, Jin Sung Lin

Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369379
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

The ion-sensitive field-effect transistors (IFSETs) with hydrogenated amorphous silicon were fabricated. In this paper, the hydrogenated amorphous silicon acting as sensing membrane was used to investigate the pH response of a-Si:H ISFET. The I_DS-V_G curves were carried out by I-V measuring system. The basic parameter of a-Si:H ISFET, namely sensitivity was obtained from I_DS-V_G curves. It exhibited a superior pH response of 50.6 mV/pH at temperature of 25 degrees C. Moreover, other characteristic parameters such as hysteresis and drift were proposed. Finally, the effects of operating temperature on sensitivity and drift were presented.

Citation Download Citation

Jung Chuan Chou and Jin Sung Lin "pH response of a-Si:H ISFET", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); https://doi.org/10.1117/12.369379

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