11 November 1999 pH response of a-Si:H ISFET
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Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369379
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
The ion-sensitive field-effect transistors (IFSETs) with hydrogenated amorphous silicon were fabricated. In this paper, the hydrogenated amorphous silicon acting as sensing membrane was used to investigate the pH response of a-Si:H ISFET. The IDS-VG curves were carried out by I-V measuring system. The basic parameter of a-Si:H ISFET, namely sensitivity was obtained from IDS-VG curves. It exhibited a superior pH response of 50.6 mV/pH at temperature of 25 degrees C. Moreover, other characteristic parameters such as hysteresis and drift were proposed. Finally, the effects of operating temperature on sensitivity and drift were presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung Chuan Chou, Jung Chuan Chou, Jin Sung Lin, Jin Sung Lin, } "pH response of a-Si:H ISFET", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369379; https://doi.org/10.1117/12.369379
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