11 November 1999 pH sensitivity and hysteresis of A-WO3 gate ISFET compared with different membranes
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Proceedings Volume 3897, Advanced Photonic Sensors and Applications; (1999) https://doi.org/10.1117/12.369359
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
Because of the pH sensitivity is one of the important characteristic parameters of ISFET devices. The response of ISFET is mainly determined with the type of the sensing membrane, therefore the sensing material plays a significant role. In addition, the hysteresis is the non-ideal and unstable factor of ISFET devices for measuring. Hence, in this study, the pH sensitivity and hysteresis of a-WO3 gate ISFET are investigated, and compare with different sensing membranes.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung Lung Chiang, Jung Lung Chiang, Jung Chuan Chou, Jung Chuan Chou, Ying-Chung Chen, Ying-Chung Chen, } "pH sensitivity and hysteresis of A-WO3 gate ISFET compared with different membranes", Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369359; https://doi.org/10.1117/12.369359
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