4 November 1999 Application of a mercury cadmium telluride focal plane array to semiconductor device manufacturing and reliability
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Proceedings Volume 3898, Photonic Systems and Applications in Defense and Manufacturing; (1999) https://doi.org/10.1117/12.368496
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
A mercury cadmium telluride (MCT) focal plane array has been sued to build a combined visible light and IR photoemission microscope with sensitivity up to 500 times better than conventional PEMs, which are based on either intensified or cooled CCDs. PEMs are widely used for integrated circuit failure analysis and in yield enhancement programs; they detect and identify failure sites by the low levels of light emitted from the semiconductor. An MCT based PEM operating in the wavelength range 800 nm to 2500 nm offers several advantages over systems operating in the visible part of the spectrum. Beyond 1000 nm, band gap emission is imaged directly from forward biased p-n junctions and this part of the spectrum includes the regions of most intense emission from avalanche breakdown and hot carrier defects. Beyond 1000 nm most silicon is effectively transparent and this offers significant advantages for backside failure analysis, especially for flip chip devices. Thermal emission is detected from ares approximately 1 degree C above ambient so failure mechanism not usually amenable to analysis by PEM can be located.
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Alastair Trigg, "Application of a mercury cadmium telluride focal plane array to semiconductor device manufacturing and reliability", Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); doi: 10.1117/12.368496; https://doi.org/10.1117/12.368496
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