4 November 1999 Laser direct etching for a PDP cell using Nd:YAG laser
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Proceedings Volume 3898, Photonic Systems and Applications in Defense and Manufacturing; (1999) https://doi.org/10.1117/12.368478
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
A photoresist films on Si and commercial glass and the paste dried and hardened for forming barrier rib of PDP were directly etched with Ar+ laser Nd:YAG laser beam. Exposing the photoresist to a fourth harmonic Nd:YAG laser beam to produce electrodes on the transparent conductive material, the etching threshold laser fluence was 25 J/cm2 and the damage of substrate was appeared over the laser fluence of 40 J/cm2. The reaction mechanism of the photoresist by the UV laser beam, compared to that by Ar+ laser, is photon-assisted ablation. A barrier rib is compared of mixtures that were made form organic gel, glass powder and ceramic powder. Using a second harmonic Nd:YAG laser the threshold laser fluence was 65 mJ/cm2 for the barrier rib samples softened at 120 degrees C. The thickness of 130 (mu) M of the samples on the glass was clearly removed without any damage on the glass substrate by laser fluence of 19.5 J/cm2. The barrier rib samples on hot plate were etched by Nd:YAG laser with increasing a temperature of the sample. The etch rate at 200 degrees C was 4 times of that at room temperature. Indium tin oxide thin films on lime glass were directly etched using the second and fourth harmonic Nd:YAG laser beam.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
KyoungCheol Lee, KyoungCheol Lee, MinYoung Ahn, MinYoung Ahn, Cheon Lee, Cheon Lee, } "Laser direct etching for a PDP cell using Nd:YAG laser", Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); doi: 10.1117/12.368478; https://doi.org/10.1117/12.368478

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