9 November 1999 650-nm AlGaInP quantum well lasers for the application of DVD
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Abstract
Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm2 respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, the samples of LD have been certified by PUH manufacturers.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lianhui Chen, Lianhui Chen, Xiaoyu Ma, Xiaoyu Ma, Liang Guo, Liang Guo, Jun Ma, Jun Ma, Hongyu Ding, Hongyu Ding, Qing Cao, Qing Cao, Liming Wang, Liming Wang, Guangzhe Zhang, Guangzhe Zhang, Yali Yang, Yali Yang, Guohong Wang, Guohong Wang, Manqing Tan, Manqing Tan, } "650-nm AlGaInP quantum well lasers for the application of DVD", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369422; https://doi.org/10.1117/12.369422
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