9 November 1999 Aligned In0.5Ga0.5As quantum dots on laser-patterned GaAs substrate
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Abstract
It has been studied the selective InGaAs quantum dots growth on laser-patterned GaAs substrate by atmospheric pressure metal organic chemical vapor deposition. We have patterned the samples below etching threshold power density 8.84 MW/cm2 by argon ion laser. The depth and lateral size of the pattern are about 8 nm and 100 nm, respectively. The QDs were grown on AlGaAs matrix.
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SeKi Park, SeKi Park, C. K. Hyon, C. K. Hyon, Byung Don Min, Byung Don Min, Hyo Jin Kim, Hyo Jin Kim, Sung Min Hwang, Sung Min Hwang, Eun Kyu Kim, Eun Kyu Kim, Hong Kyu Lee, Hong Kyu Lee, Cheon Lee, Cheon Lee, Yong-Gi Kim, Yong-Gi Kim, } "Aligned In0.5Ga0.5As quantum dots on laser-patterned GaAs substrate", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369430; https://doi.org/10.1117/12.369430
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