Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors

Dao Hua Zhang; Yongsheng Gao; J. Wei

doi:10.1117/12.369429

9 November 1999 Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors

Dao Hua Zhang, Yongsheng Gao, J. Wei

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369429
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Amorphous silicon-carbon-nitrogen films prepared using the industry-used electron cyclotron resonance chemical vapor deposition technique at room temperature for photoconductive detectors are systematically investigate.d It is found that the film quality is sensitive to the preparation conditions. The deposition rate of the films is found to increase with the microwave power. It peaks at a ratio of silane to the mixture of silane, methane and nitrogen around 33 percent and at a radio frequency (RF) bias of 100 V. The otpical energy band-gap of the films increases monotonically with the gas ratio but decreases with RF bias. The conductivity of the materials is also found to vary with the preparation conditions. The change in the energy band-gap and conductivity is associated with the change in the incorporation of carbon and nitrogen. The wavelength in the range of 0.65 to 0.45 micron could be detected by controlling the deposition conditions.

Citation Download Citation

Dao Hua Zhang, Yongsheng Gao, and J. Wei "Amorphous SiCN films prepared by ECR-CVD technique for photoconductive detectors", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369429

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