9 November 1999 Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy
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Abstract
We report the results of the investigation of the structural, surface morphological, and optical properties of GaN films grown by hydride vapor phase epitaxy. These films were grown on sapphire substrate with no intentional dopings. These as-grown GaN film samples with thickness ranging from 5.58 micrometers to 14.9 micrometers were investigated under room temperature conditions. The surface morphology of these films was investigated using an atomic force microscopy (AFM). The root mean square values of surface roughness range from 0.281 nm to 0.133 nm. The thicker films show lower defect counts with defect density of about 2 X 108 cm-2. The structural property of these films was measured by double crystal x-ray diffraction. The full width at half maximum of x-ray diffraction angle decreases as the film thickness increases with a lowest FWHM of about 265.5 arcsec. The optical properties of these films were investigated by photoluminescence measurement at room temperature. The result show a dominant near band-edge UV emission peak that increases with the film thickness with very weak yellow emission band.
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Huimei Fang, Huimei Fang, Y. K. Wang, Y. K. Wang, Ray-yen Tsai, Ray-yen Tsai, Chen Fu Chu, Chen Fu Chu, S. C. Wang, S. C. Wang, } "Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369439; https://doi.org/10.1117/12.369439
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