9 November 1999 Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing
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Abstract
Quantum well intermixing (QWI) is a promising technology for the fabrication of photonic integrated circuits (PICs). In this paper, we report the development of a new QWI process using undoped and Er-doped SiO2 dielectric caps prepared using sol-gel technique. A differential bandgap shift of as large as 83meV have been observed from samples intermixed with Er-doped SiO2 respectively. Broad area gain guided lasers have been fabricated from the as-grown and samples with bandgap tuned to different degrees using undoped and Er-doped SiO2. Lasers fabricated from the as-grown, undoped and Er-doped SiO2 samples showed lasing wavelengths of 865nm, 850nm and 835nm respectively. Compared to the 865nm, the threshold current of the 850nm and 835nm wavelength lasers were found to increase by 5 percent and 9.5 percent respectively. The slope efficiencies from these lasers were found to exhibit only small change compared to the as-grown lasers. These results imply that the quality of the material remains relatively high after intermixed using sol-gel SiO2 induced QWI technique.
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Lye Huat Lee, Lye Huat Lee, Oki Gunawan, Oki Gunawan, Boon Siew Ooi, Boon Siew Ooi, Yan Zhou, Yan Zhou, Yuen Chuen Chan, Yuen Chuen Chan, Yee Loy Lam, Yee Loy Lam, "Fabrication of bandgap-tuned lasers in GaAs/AlGaAs structure using sol-gel SiO2-induced quantum well intermixing", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369388; https://doi.org/10.1117/12.369388
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