9 November 1999 GaAs/AlxOy photonic bandgap material fabrication and characterization
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Abstract
A relatively simple technique for fabrication of GaAs-based quasi-3D photonic crystals has been investigated. Selective impurity-induced layer disordering and wet oxidation techniques are utilized. The feasibility of this technique is successfully demonstrated and a photonic bandgap material with its bandgap around 1.18 micrometers has been fabricated. The electro-optic coefficients have been measured for the first time in such a medium. The process is reproducible an lends itself to integration with other optoelectronic and electronic devices on the same substrate, which might be required for pumping, electrical injection or other functions.
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Pallab Bhattacharya, Pallab Bhattacharya, Weidong Zhou, Weidong Zhou, Jayshri Sabarinathan, Jayshri Sabarinathan, Donghai Zhu, Donghai Zhu, } "GaAs/AlxOy photonic bandgap material fabrication and characterization", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369407; https://doi.org/10.1117/12.369407
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