9 November 1999 High-performance-readout integrated circuit for surface-micromachined bolometer arrays
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Abstract
In this paper, a high performance CMOS readout structure is proposed and applied for surface micromachined bolometer arrays. The silicon readout circuit is an important interface circuit for detector array and signal processing stages in the IR image syste. Conventional readout configurations for thermal resistive sensors can be classified into four groups (1) Constant Temperature (CT), (2) Constant Current (CC), (3) Constant Voltage (CV), (4) Constant Bias (CB). To achieve a high performance readout and fit the working characteristics of IR detector material, new CMOS readout structures have been developed and fabricated. Based on the application of the proposed CC input biasing technique, a new CMOS Bandgap Reference Constant Current readout structure is proposed and analyzed. The low power CMOS readout circuit is achieved using the reset switch techniques. By applying the proposed bias technique to improve low power, high linearity and low sensitivity of the resistive bolometer detectors and high performance readout interface circuit for the IR linear array is realized with a pixel size of 50 X 50 micrometers 2.
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Yuan Lung Chin, Yuan Lung Chin, Tai Ping Sun, Tai Ping Sun, Jung Chuan Chou, Jung Chuan Chou, Yuan-Chung Chin, Yuan-Chung Chin, YuanChin Chou, YuanChin Chou, Wen Yaw Chung, Wen Yaw Chung, Shen Kan Hsiung, Shen Kan Hsiung, } "High-performance-readout integrated circuit for surface-micromachined bolometer arrays", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369384; https://doi.org/10.1117/12.369384
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