9 November 1999 Holographic storage property of In:Fe:LiNbO3
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Abstract
In2O3 and Fe2O3 were doped in LiNbO3 and Czochralski method was used to grow In:Fe:LiNbO3 crystals. The light scattering ability resistance, exponential gain coefficient, diffraction efficiency and response time of the crystals were measured. The light scattering ability resistance and response time of In:Fe:LiNbO3 is one magnitude higher than Fe:LiNbO3. In:Fe:LiNbO3 was used as storage element to make the large capacity holographic storage and the holographic associative storage reality. The excellent results were gained.
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Wusheng Xu, Wusheng Xu, Rui Wang, Rui Wang, Minghua Li, Minghua Li, Yuheng Xu, Yuheng Xu, } "Holographic storage property of In:Fe:LiNbO3", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369435; https://doi.org/10.1117/12.369435
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