Holographic storage property of In:Fe:LiNbO3

Wusheng Xu; Rui Wang; Minghua Li; Yuheng Xu

doi:10.1117/12.369435

9 November 1999 Holographic storage property of In:Fe:LiNbO₃

Wusheng Xu, Rui Wang, Minghua Li, Yuheng Xu

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369435
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

In₂O₃ and Fe₂O₃ were doped in LiNbO₃ and Czochralski method was used to grow In:Fe:LiNbO₃ crystals. The light scattering ability resistance, exponential gain coefficient, diffraction efficiency and response time of the crystals were measured. The light scattering ability resistance and response time of In:Fe:LiNbO₃ is one magnitude higher than Fe:LiNbO₃. In:Fe:LiNbO₃ was used as storage element to make the large capacity holographic storage and the holographic associative storage reality. The excellent results were gained.

Citation Download Citation

Wusheng Xu, Rui Wang, Minghua Li, and Yuheng Xu "Holographic storage property of In:Fe:LiNbO₃", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369435

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