9 November 1999 Luminescence, morphology, and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition
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Abstract
InGaN thin films were grown by low-pressure metalorganic chemical vapor deposition and characterized by photoluminescence with variable excitation intensity and temperature, room-temperature cathodoluminescence (CL), high resolution X-ray diffraction, scanning-electron-microscopy (SEM) and atomic force microscopy (AFM). For PL, all the sample show dominant peaks at around 2.9 eV and extra peaks or shoulders at 2.8 eV at 6K. We concluded that the low energy peak is due to the localized near-band edge transition from the phase-separated InGaN mesoscopic structure with high In-content. The strong luminescence of the low of nanostructure or quantum dots. AFM images showed that phase-separated InGaN samples have inverted hexagonal pits which are formed by the In segregation on the surfaces. Room temperatures cathodoluminescence and imags at wavelengths corresponding to the GaN band edge, the In-poor and In rich regions were studied. It was shown that phase separated In-rich regions formed at the periphery of the hexagonal pits.
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Peng Li, Soo-Jin Chua, Zhe Chuan Feng, W. Wang, Maosheng Hao, Tamoya Sugahara, Shiro Sakai, "Luminescence, morphology, and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369413; https://doi.org/10.1117/12.369413
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