Paper
9 November 1999 Normal-incident SiGe/Si MQW photodetectors operating at 1.3 μm
Buwen Cheng, Chengfang Li, Qingqing Yang, Hongjie Wang, Liping Luo, Jinzhong Yu, Qiming Wang
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Abstract
A normal-incident SiGe/Si multiple quantum wells photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 micrometers wavelength. The quantum efficiency of the photodetector was 0.1 percent at 1.3 micrometers and 20 percent at 0.95 micrometers .
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Buwen Cheng, Chengfang Li, Qingqing Yang, Hongjie Wang, Liping Luo, Jinzhong Yu, and Qiming Wang "Normal-incident SiGe/Si MQW photodetectors operating at 1.3 μm", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369415
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KEYWORDS
Photodetectors

Absorption

Silicon

Quantum efficiency

External quantum efficiency

Germanium

Aluminum

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