Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

Xinghua Wang; Aiming Song; Jian Liu; Winchao Cheng; Guohua Li; Chengfang Li; YueXia Li; Jinzhong Yu

doi:10.1117/12.369386

9 November 1999 Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

Xinghua Wang, Aiming Song, Jian Liu, Winchao Cheng, Guohua Li, Chengfang Li, YueXia Li, Jinzhong Yu

Author Affiliations +

Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999) https://doi.org/10.1117/12.369386
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Citation Download Citation

Xinghua Wang, Aiming Song, Jian Liu, Winchao Cheng, Guohua Li, Chengfang Li, YueXia Li, and Jinzhong Yu "Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369386

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