9 November 1999 Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching
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Abstract
GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.
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Xinghua Wang, Xinghua Wang, Aiming Song, Aiming Song, Jian Liu, Jian Liu, Winchao Cheng, Winchao Cheng, Guohua Li, Guohua Li, Chengfang Li, Chengfang Li, YueXia Li, YueXia Li, Jinzhong Yu, Jinzhong Yu, "Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369386; https://doi.org/10.1117/12.369386
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