9 November 1999 Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition
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Proceedings Volume 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures; (1999); doi: 10.1117/12.369404
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore
Abstract
GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si substrates with specially designed composite intermediate layers consisting of a ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. The structural and optical properties of these new grown material were studied. X-ray diffraction, Raman scattering and Fourier transform IR reflectance measurement confirmed their wurtzite structure. Scanning electron microscopy exhibited the single crystalline grain size up to approximately 2 micrometers . Photoluminescence showed strong GaN near edge emission, with only very weak deep defect-related emissions, for GaN films, and strong MQW emissions. The film surface morphology and material properties are improved by adjusting the growth conditions and buffer layer structural design.
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Jingli Chen, Zhe Chuan Feng, X. Zhang, Soo-Jin Chua, Yong Tian Hou, Jianyi Lin, "Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369404; https://doi.org/10.1117/12.369404
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KEYWORDS
Gallium nitride

Silicon

Crystals

Metalorganic chemical vapor deposition

FT-IR spectroscopy

Scanning electron microscopy

Silicon films

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