24 September 1999 Self-switching in optical bistable cavity-free system
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Proceedings Volume 3900, 3rd International Conference on Optical Information Processing; (1999); doi: 10.1117/12.364525
Event: Third International Conference on Optical Information Processing, 1999, Moscow, Russian Federation
Abstract
Problems of stability of bistable states in aspect of information storage are considered. Influence of temperature dependencies of absorption coefficient and relaxation time of free electrons onto realization of bistability and possibility of self-switching were investigated in context of a point-wise model. As a result various regimes of interaction of light pulse with the semiconductor were revealed due to the numerical simulation and parametrical analysis. Principal possibility of instability of both bistable states, which promote development of self- switching, was first shown in the model.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatiana M. Lysak, Vyacheslav A. Trofimov, "Self-switching in optical bistable cavity-free system", Proc. SPIE 3900, 3rd International Conference on Optical Information Processing, (24 September 1999); doi: 10.1117/12.364525; https://doi.org/10.1117/12.364525
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KEYWORDS
Absorption

Semiconductors

Bistability

Electrons

Switching

Semiconductor lasers

Temperature metrology

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