9 November 1999 SiC-AlN-composition-based MEMS
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Proceedings Volume 3903, Indo-Russian Workshop on Micromechanical Systems; (1999) https://doi.org/10.1117/12.369453
Event: Indo-Russian Workshop on Micromechanical Systems, 1999, New Delhi, India
Abstract
The classical microelectromechanics is oriented to the standard silicon technology which is presently dominated by the 'silicon-on-silicon dioxide' structure. This choice presents a combination of two wide band gap materials: one is aluminum nitride which is a pronounced dielectric and possesses piezoelectric properties as well, and the other, silicon carbide, is a typical semiconductor. Both of them are optically active, including the UV region, and have high heat conductances and Debye temperatures which are characteristic of the material durability against thermal, chemical and radiation influences.
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Victor V. Luchinin, Andrey V. Korlyakov, A. A. Vasilev, Givi I. Jandjgava, Stanislav V. Prosorov, Aleksander K. Solomatin, Anatoley V. Sorokin, Sergey G. Kucherkov, Leonid A. Severov, Valeriy K. Ponomarev, "SiC-AlN-composition-based MEMS", Proc. SPIE 3903, Indo-Russian Workshop on Micromechanical Systems, (9 November 1999); doi: 10.1117/12.369453; https://doi.org/10.1117/12.369453
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