New requirement for communication, computing, optoelectronics, medical, space, civil and military systems stress the need for increasing sped, information content and processing of optical energy in specific forms. In order to meet the requirements the device technology must be improvised. The development of new lasers has satisfied the source requirements. New low coast and efficient optoelectronic devices are desirable to process and detect the light derived from such sources, so that the optical system becomes capable of high speed functioning, rapid information density communications and computing. The current available are the devices made from single crystals, epitaxial films and thin films of Si HgCdTe and ZnTe, ZnSe, ZnTeSe and Cd1-xZnxTe.