18 November 1999 Semiconductor detectors for the erytheme region of UV radiation
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Proceedings Volume 3904, Fourth International Conference on Correlation Optics; (1999) https://doi.org/10.1117/12.370468
Event: International Conference on Correlation Optics, 1999, Chernivsti, Ukraine
Abstract
Main parameters and characteristics of surface-barrier diodes sensitive for UV irradiation on the base of ZnSe are presented in the given paper. Possibilities of application of developed semiconductor photoreceivers for detectors of erytheme region are being discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. P. Makhniy, V. P. Makhniy, Leonid P. Gal'chinetsky, Leonid P. Gal'chinetsky, Vladimir D. Ryzhikov, Vladimir D. Ryzhikov, } "Semiconductor detectors for the erytheme region of UV radiation", Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); doi: 10.1117/12.370468; https://doi.org/10.1117/12.370468
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