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14 April 2000 Laser characterization of the Yb3+:Y2SiO5 (Yb:YOS)
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Proceedings Volume 3929, Solid State Lasers IX; (2000) https://doi.org/10.1117/12.382787
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States
Abstract
The spectroscopic properties of Yb3+:Y2SiO5 (Yb:YOS) and its laser potential for 1 micrometers emission are investigated. Crystals containing 5% of Yb3+ ions (9.2 X 1020 ions/cm3) with very good optical quality have been grown by the Czochralski process. An energy-level diagram for Yb3+ in this host is proposed, taking into account electron-phonon coupling phenomena. A broad emission, from 0.98 micrometers to 1.1 micrometers , with a lifetime of 1.5 ms have been measured and the laser parameters indicate that this host could be well adapted for high power lasers. In good agreement with the spectroscopic predictions, laser oscillation under Ti:sapphire laser pumping was observed for the first time, on uncoated crystals in a plano-concave cavity. A slope efficiency of 44% and a laser threshold around 160 mW have been obtained. This laser material appears very attractive for the development of new Yb3+ sources.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Romain Gaume, Paul-Henri Haumesser, Gerard Aka, Bruno Viana, D. Vivien, and Bernard Ferrand "Laser characterization of the Yb3+:Y2SiO5 (Yb:YOS)", Proc. SPIE 3929, Solid State Lasers IX, (14 April 2000); https://doi.org/10.1117/12.382787
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