Paper
7 November 1983 Optic And X-Ray Lithographies In 1990's
J. P. Lazzari, P. Parrens
Author Affiliations +
Abstract
Among various submicron lithography techniques, optical and X-rays are potentially opened for IC production in the future. The purpose of this paper is to foresee the applications of these two technics in 1990's. In the first part of this study, we define for X-rays the key points and natural limitations for various source approaches (conventional sources, gas pinch, storage ring). Then, we analyse the possibilities offered by X-ray lithography, assuming that all technological problems are solved. We suppose that every source is existing and reliable, that masks are stable and without defects, and finally that resists with good sensitivity to contrast ratio exist. Based upon experimental results, we foresee the performances of optical lithography. A second part compares the annlication of X-ray and optical lithogranhies, in terms of financial and nerformance analyses, in regard to the evolution of design rules and dimension reduction. The conclusion will try to predict the application of these two techniques.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Lazzari and P. Parrens "Optic And X-Ray Lithographies In 1990's", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935113
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KEYWORDS
Semiconducting wafers

Photomasks

Lithography

X-ray lithography

Distortion

X-rays

X-ray optics

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