Status Of The Production Use Of Ion Implantation For IC Manufacture And Requirements For Competitive Application Of Focused Ion Beams

Michael I. Current; Alfred Wagner

doi:10.1117/12.935109

7 November 1983 Status Of The Production Use Of Ion Implantation For IC Manufacture And Requirements For Competitive Application Of Focused Ion Beams

Michael I. Current, Alfred Wagner

Author Affiliations +

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935109
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

An outline is given of the range of applications and limitations of "broad beam" implantation techniques for LSI and VLSI device fabrication. Some of these limitations include dose uniformity and accuracy, resist stability and erosion, wafer heating effects during implantation, surface contamination and charging effects. The impact of these and other issues on the fabrication of fine feature (less than 0.5 micron) devices, including a comparison of the application of focused ion beams for direct implantation is discussed.

Citation Download Citation

Michael I. Current and Alfred Wagner "Status Of The Production Use Of Ion Implantation For IC Manufacture And Requirements For Competitive Application Of Focused Ion Beams", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935109

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